The Miracle Month
The
Invention of the First Transistor,
November 17-December 23, 1947
November 17-December 23, 1947
Getting Wet
On November 17, 1947, Walter Brattain dumped his whole
experiment into a thermos of water. The silicon contraption he'd built
was supposed to help him study how electrons acted on the surface
of a semiconductor -- and why whatever they were doing made it impossible
to build an amplifier. But condensation kept forming on the silicon
and messing up the experiment. To get rid of that condensation, Brattain
probably should have put the silicon in a vacuum, but he decided that
would take too long. Instead he just dumped the whole experiment under
water -- it certainly got rid of the condensation!
Out of the blue, the wet device created the largest
amplification he'd seen so far. He and another scientist, Robert Gibney,
stared at the experiment, stunned. They began fiddling with different
knobs and buttons: by turning on a positive voltage they increased
the effect even more; turning it to negative could get rid of it completely.
It seemed that whatever those electrons had been doing on the surface
to block amplification had somehow been canceled out by the water -- the
greatest obstacle to building an amplifier had been overcome.
Putting
the Idea to Use
When John Bardeen was told what had happened he thought
of a new way to make an amplifier. On November 21, Bardeen suggested
pushing a metal point into the silicon surrounded by distilled water.
The water would eliminate that exasperating electron problem just
under the point as it had in the thermos. The tough part was that
the contact point couldn't touch the water, it must only touch the
silicon. But as always, Brattain was a genius in the lab. He could
build anything. And when this amplifier was built, it worked. Of course,
there was only a tiny bit of amplification -- but it worked.
Big
Amplification
Once they'd gotten slight amplification with that tiny
drop of water, Bardeen and Brattain figured they were on the road
to something worthwhile. Using different materials and different setups
and different electrolytes in place of the water, the two men tried
to get an even bigger increase in current. Then on December 8, Bardeen
suggested they replace the silicon with germanium. They got a current
jump, all right -- an amplification of some 330 times -- but in the
exact opposite direction they'd expected. Instead of moving the electrons
along, the electrolyte was getting the holes moving. But amplification
is amplification -- it was a start.
Brattain
Makes a Mistake
Unfortunately this giant jump in amplification only
worked for certain types of current -- ones with very low frequencies.
That wouldn't work for a phone line, which has to handle all the complex
frequencies of a person's voice. So the next step was to get it to
work at all kinds of frequencies.
Bardeen and Brattain thought it might be the liquid
which was the problem. So they replaced it with germanium dioxide -- which
is essentially a little bit of germanium rust. Gibney prepared a special
slab of germanium with a shimmering green oxide layer on one side.
On December 12, Brattain began to insert the point contacts.
Nothing
happened.
In fact the device worked as if there was no oxide layer
at all. And as Brattain poked the gold contact in again and again,
he realized that's because there wasn't an oxide layer. He had washed
it off by accident. Brattain was furious with himself, but decided
to fiddle with the point contact anyway. To his surprise, he actually
got some voltage amplification -- and more importantly he could get
it at all frequencies! The gold contact was putting holes into the
germanium and these holes canceled out the effect of the electrons
at the surface, the same way the water had. But this was much better
than the version that used water, because now, the device was increasing
the current at all frequencies.
 |
Bringing
it All Together
In the past month, Bardeen and Brattain had managed
to get a large amplification at some frequencies and they'd gotten
a small amplification for all frequencies -- now they just had to combine
the two. They knew that the key components were a slab of germanium
and two gold point contacts just fractions of a millimeter apart.
Walter Brattain put a ribbon of gold foil around a plastic triangle,
and sliced it through at one of the points. By putting the point of
the triangle gently down on the germanium, they saw a fantastic effect
-- signal came in through one gold contact and increased as as it raced
out the other. The
first point-contact transistor had been made.
Telling
the Brass
For a week, the scientists kept their success a secret.
Shockley asked Bardeen and Brattain to show off their little plastic
triangle at a group meeting to the lab and the higher-ups on December
23. After the rest of the lab had a chance to look it over and conduct
a few tests, it was official -- this tiny bit of germanium, plastic
and gold was the first working solid state amplifier.
William Shockley
Jump to navigation
Jump to search
William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American physicist and inventor. Shockley was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect."
Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s led to California's "Silicon Valley" becoming a hotbed of electronics innovation. In his later life, Shockley was a professor of electrical engineering at Stanford University and became a proponent of eugenics.[1][2]
Shockley was born in London, to American parents, and raised in his family's hometown of Palo Alto, California from the age of three.[3]
His father, William Hillman Shockley, was a mining engineer who
speculated in mines for a living and spoke eight languages. His mother,
Mary (née Bradford), grew up in the American West, graduated from
Stanford University and became the first female US Deputy mining
surveyor.[4]
| William Shockley | |
|---|---|
 | |
| Born | William Bradford Shockley Jr. February 13, 1910 Greater London, England, United Kingdom |
| Died | August 12, 1989 (aged 79) Stanford, California, United States |
| Nationality | American |
| Alma mater | |
| Known for | |
| Awards |
|
| Scientific career | |
| Institutions | |
| Doctoral advisor | John C. Slater |
Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s led to California's "Silicon Valley" becoming a hotbed of electronics innovation. In his later life, Shockley was a professor of electrical engineering at Stanford University and became a proponent of eugenics.[1][2]
Early life and education
Shockley earned his Bachelor of Science degree from Caltech in 1932 and a PhD from MIT in 1936. The title of his doctoral thesis was Electronic Bands in Sodium Chloride, a topic suggested by his thesis advisor, John C. Slater.[5] After receiving his doctorate, Shockley joined a research group headed by Clinton Davisson at Bell Labs in New Jersey. The next few years were productive for Shockley. He published a number of fundamental papers on solid state physics in Physical Review. In 1938, he got his first patent, "Electron Discharge Device", on electron multipliers.[6]
Career
When World War II broke out, Shockley became involved in radar research at Bell Labs in Manhattan (New York City). In May 1942, he took leave from Bell Labs to become a research director at Columbia University's Anti-Submarine Warfare Operations Group.[7] This involved devising methods for countering the tactics of submarines with improved convoying techniques, optimizing depth charge patterns, and so on. This project required frequent trips to the Pentagon and Washington, where Shockley met many high-ranking officers and government officials. In 1944, he organized a training program for B-29 bomber pilots to use new radar bomb sights. In late 1944 he took a three-month tour to bases around the world to assess the results. For this project, Secretary of War Robert Patterson awarded Shockley the Medal for Merit on October 17, 1946.[8]In July 1945, the War Department asked Shockley to prepare a report on the question of probable casualties from an invasion of the Japanese mainland. Shockley concluded:
If the study shows that the behavior of nations in all historical cases comparable to Japan's has in fact been invariably consistent with the behavior of the troops in battle, then it means that the Japanese dead and ineffectives at the time of the defeat will exceed the corresponding number for the Germans. In other words, we shall probably have to kill at least 5 to 10 million Japanese. This might cost us between 1.7 and 4 million casualties including 400,000 to 800,000 killed.[9]This report influenced the decision of the United States to drop atomic bombs on Hiroshima and Nagasaki, which precipitated the unconditional surrender of Japan.[10]
Shockley was the first physicist to propose a lognormal distribution to model the creation process for scientific research papers.[11]
Development of the transistor
Shortly after the war ended in 1945, Bell Labs formed a solid-state physics group, led by Shockley and chemist Stanley Morgan, which included John Bardeen, Walter Brattain, physicist Gerald Pearson, chemist Robert Gibney, electronics expert Hilbert Moore, and several technicians. Their assignment was to seek a solid-state alternative to fragile glass vacuum tube amplifiers. Its first attempts were based on Shockley's ideas about using an external electrical field on a semiconductor to affect its conductivity. These experiments failed every time in all sorts of configurations and materials. The group was at a standstill until Bardeen suggested a theory that invoked surface states that prevented the field from penetrating the semiconductor. The group changed its focus to study these surface states and they met almost daily to discuss the work. The rapport of the group was excellent, and ideas were freely exchanged.[12]By the winter of 1946 they had enough results that Bardeen submitted a paper on the surface states to Physical Review. Brattain started experiments to study the surface states through observations made while shining a bright light on the semiconductor's surface. This led to several more papers (one of them co-authored with Shockley), which estimated the density of the surface states to be more than enough to account for their failed experiments. The pace of the work picked up significantly when they started to surround point contacts between the semiconductor and the conducting wires with electrolytes. Moore built a circuit that allowed them to vary the frequency of the input signal easily. Finally they began to get some evidence of power amplification when Pearson, acting on a suggestion by Shockley, put a voltage on a droplet of glycol borate (a viscous chemical that did not evaporate, commonly used in electrolytic capacitors, and obtained by puncturing an example capacitor with a nail, using a hammer) placed across a P-N junction.[13]
John Bardeen, William Shockley and Walter Brattain at Bell Labs, 1948.
Shockley, angered by not being included on the patent applications, secretly continued his own work to build a different sort of transistor based on junctions instead of point contacts; he expected this kind of design would be more likely to be commercially viable. The point contact transistor, he believed, would prove to be fragile and difficult to manufacture. Shockley was also dissatisfied with certain parts of the explanation for how the point contact transistor worked and conceived of the possibility of minority carrier injection. On February 13, 1948 another team member, John N. Shive, built a point contact transistor with bronze contacts on the front and back of thin wedge of germanium, proving that holes could diffuse through bulk germanium and not just along the surface as previously thought.[17]:153[18]:145 Shive's invention sparked[19] Shockley's invention of the junction transistor.[17]:143 A few months later he invented an entirely new, considerably more robust, type of transistor with a layer or 'sandwich' structure. This structure went on to be used for the vast majority of all transistors into the 1960s, and evolved into the bipolar junction transistor. Shockley later admitted that the workings of the team were "mixture of cooperation and competition." He also admitted that he kept some of his own work secret until his "hand was forced" by Shive's 1948 advance.[20] Shockley worked out a rather complete description of what he called the "sandwich" transistor, and a first proof of principle was obtained on April 7, 1949.
Meanwhile, Shockley worked on his magnum opus, Electrons and Holes in Semiconductors which was published as a 558-page treatise in 1950. The tome included Shockley's critical ideas of drift and diffusion and the differential equations that govern the flow of electrons in solid state crystals. Shockley's diode equation is also described. This seminal work became the reference text for other scientists working to develop and improve new variants of the transistor and other devices based on semiconductors.[21]
This resulted in his invention of the bipolar "junction transistor", which was announced at a press conference on July 4, 1951.[22]
In 1951, he was elected to the National Academy of Sciences (NAS). He was forty-one years old; this was rather young for such an election. Two years later, he was chosen as the recipient of the prestigious Comstock Prize[23] for Physics by the NAS, and was the recipient of many other awards and honors.
The ensuing publicity generated by the "invention of the transistor" often thrust Shockley to the fore, much to the chagrin of Bardeen and Brattain. Bell Labs management, however, consistently presented all three inventors as a team. Though Shockley would correct the record where reporters gave him sole credit for the invention,[24] he eventually infuriated and alienated Bardeen and Brattain, and he essentially blocked the two from working on the junction transistor. Bardeen began pursuing a theory for superconductivity and left Bell Labs in 1951. Brattain refused to work with Shockley further and was assigned to another group. Neither Bardeen nor Brattain had much to do with the development of the transistor beyond the first year after its invention.[25]
Shockley Semiconductor
In 1956 Shockley moved from New Jersey to Mountain View, California to start Shockley Semiconductor Laboratory to live closer to his ailing and elderly mother in rural Palo Alto, California.[26][27] The company, a division of Beckman Instruments, Inc., was the first establishment working on silicon semiconductor devices in what came to be known as Silicon Valley."His way" could generally be summed up as domineering and increasingly paranoid. In one well-known incident, he claimed that a secretary's cut thumb was the result of a malicious act and he demanded lie detector tests to find the culprit, when in reality, the secretary had simply grabbed at a door handle that happened to have an exposed tack on it for the purpose of hanging paper notes on.[28] After he received the Nobel Prize in 1956 his demeanor changed, as evidenced in his increasingly autocratic, erratic and hard-to-please management style.[29] In late 1957, eight of Shockley's researchers, who would come to be known as the "traitorous eight", resigned after Shockley decided not to continue research into silicon-based semiconductors.[30] They went on to form Fairchild Semiconductor, a loss from which Shockley Semiconductor never recovered. Over the course of the next 20 years, more than 65 new enterprises would end up having employee connections back to Fairchild.[31]
A group of about thirty colleagues who had met on and off since 1956 met again at Stanford in 2002 to reminisce about their time with Shockley and his central role in sparking the information technology revolution. The group's organizer said, "Shockley is the man who brought silicon to Silicon Valley."[32]
Political views
Late in his life, Shockley became intensely interested in questions of race, human intelligence, and eugenics. He thought this work was important to the genetic future of the human species and he came to describe it as the most important work of his career, even though expressing his views damaged his reputation. Shockley argued that a higher rate of reproduction among the less intelligent was having a dysgenic effect, and that a drop in average intelligence would ultimately lead to a decline in civilization. With regard to racial differences he used standard phraseology; for example, in a debate with Afrocentrist Frances Welsing and on Firing Line with William F. Buckley Jr.:My research leads me inescapably to the opinion that the major cause of the American Negro's intellectual and social deficits is hereditary and racially genetic in origin and, thus, not remediable to a major degree by practical improvements in the environment.[33]Shockley's published writings and lectures to scientific organizations on this topic were partly based on the writings of psychologist Cyril Burt and were funded by the Pioneer Fund. Shockley also proposed that individuals with IQs below 100 be paid to undergo voluntary sterilization.[34]
Anthropologist Roger Pearson, whose writings are based on an evolutionary and racialist[35] approach, has defended Shockley in a self-published book co-authored with Shockley.[36] University of Wisconsin–Milwaukee professor Edgar G. Epps[37] argued that "William Shockley's position lends itself to racist interpretations".[38]
In 1981 he filed a libel suit against the Atlanta Constitution after a science writer, Roger Witherspoon, compared Shockley's advocacy of a voluntary sterilization program to Nazi experiments on Jews. The suit took three years to go to trial. Shockley won the suit but received only one dollar in actual damages[39] and no punitive damages. Shockley's biographer Joel Shurkin, a science writer on the staff of Stanford University during those years, sums this up as saying that the statement was defamatory, but Shockley's reputation was not worth much by the time the trial reached a verdict.[40] Shockley taped his telephone conversations with reporters, and then sent the transcript to them by registered mail. At one point he toyed with the idea of making them take a simple quiz on his work before discussing the subject with them. His habit of saving all his papers (including laundry lists) provides abundant documentation for researchers on his life.[41]
Personal life
While still a student, Shockley married Jean Bailey at age 23 in August 1933. In March 1934, the couple had a daughter, Alison. Shockley became an accomplished rock climber, going often to the Shawangunks in the Hudson River Valley, where he pioneered a route across an overhang, known to this day as "Shockley's Ceiling."[13] Shockley was popular as a speaker, lecturer, and an amateur magician. He once "magically" produced a bouquet of roses at the end of his address before the American Physical Society. He was also known in his early years for his elaborate practical jokes.[42]Shockley donated sperm to the Repository for Germinal Choice, a sperm bank founded by Robert Klark Graham in hopes of spreading humanity's best genes. The bank, called by the media the "Nobel Prize sperm bank," claimed to have three Nobel Prize-winning donors, though Shockley was the only one to publicly acknowledge his donation to the sperm bank. However, Shockley's controversial views brought the Repository for Germinal Choice a degree of notoriety and may have discouraged other Nobel Prize winners from donating sperm.[43]
When Shockley was eased out of the directorship of Shockley Semiconductor, he joined Stanford University, where in 1963 he was appointed the Alexander M. Poniatoff Professor of Engineering and Applied Science, in which position he remained until his retirement as professor emeritus in 1975.[44]
Death
Shockley died of prostate cancer in 1989 at the age of 79.[45] At the time of his death, he was almost completely estranged from most of his friends and family, except his second wife, the former Emmy Lanning (1913–2007). His children reportedly learned of his death by reading newspapers.[46] Shockley is interred at Alta Mesa Memorial Park in Palo Alto, California.Honors
- National Medal of Merit, for his war work in 1946.[8]
- Comstock Prize in Physics of the National Academy of Sciences in 1953.[47]
- First recipient of the Oliver E. Buckley Solid State Physics Prize of the American Physical Society in 1953.
- Co-recipient of the Nobel Prize in physics in 1956, along with John Bardeen and Walter Brattain. In his Nobel lecture, he gave full credit to Brattain and Bardeen as the inventors of the point-contact transistor. The three of them, together with wives and guests, had a rather raucous late-night champagne-fueled party to celebrate together.
- Holley Medal of the American Society of Mechanical Engineers in 1963.
- Wilhelm Exner Medal in 1963.[48]
- Honorary science doctorates from the University of Pennsylvania, Rutgers University in New Jersey, and Gustavus Adolphus Colleges in Minnesota.
- IEEE Medal of Honor from the Institute of Electrical and Electronics Engineers (IEEE) in 1980.
- Named by Time Magazine as one of the 100 most influential people of the 20th century.
- Listed at #3 on the Boston Globe's 2011 MIT150 list of the top 150 innovators and ideas in the 150-year history of MIT.
Patents
Shockley was granted over ninety US patents. Some notable ones are:- US 2502488 Semiconductor Amplifier. Apr. 4, 1950; his first granted patent involving transistors.
- US 2569347 Circuit element utilizing semiconductive material. Sept. 25, 1951; His earliest applied for (June 26, 1948) patent involving transistors.
- US 2655609 Bistable Circuits. Oct. 13, 1953; Used in computers.
- US 2787564 Forming Semiconductive Devices by Ionic Bombardment. Apr. 2, 1957; The diffusion process for implantation of impurities.
- US 3031275 Process for Growing Single Crystals. Apr. 24, 1962; Improvements on process for production of basic materials.
- US 3053635 Method of Growing Silicon Carbide Crystals. Sept. 11, 1962; Exploring other semiconductors.
Bibliography
Prewar scientific articles by Shockley
- An Electron Microscope for Filaments: Emission and Adsorption by Tungsten Single Crystals, R. P. Johnson and W. Shockley, Phys. Rev. 49, 436 - 440 (1936) doi:10.1103/PhysRev.49.436
- Optical Absorption by the Alkali Halides, J. C. Slater and W. Shockley, Phys. Rev. 50, 705 - 719 (1936) doi:10.1103/PhysRev.50.705
- Electronic Energy Bands in Sodium Chloride, William Shockley, Phys. Rev. 50, 754 - 759 (1936) doi:10.1103/PhysRev.50.754
- The Empty Lattice Test of the Cellular Method in Solids, W. Shockley, Phys. Rev. 52, 866 - 872 (1937) doi:10.1103/PhysRev.52.866
- On the Surface States Associated with a Periodic Potential, William Shockley, Phys. Rev. 56, 317 - 323 (1939) doi:10.1103/PhysRev.56.317
- The Self-Diffusion of Copper, J. Steigman, W. Shockley and F. C. Nix, Phys. Rev. 56, 13 - 21 (1939) doi:10.1103/PhysRev.56.13
Postwar articles by Shockley
- "On the Statistics of Individual Variations of Productivity in Research Laboratories", Shockley 1957
- scientific racism:
- Shockley 1966, "Possible Transfer of Metallurgical and Astronomical Approaches to Problem of Environment versus Ethnic Heredity" (on an early form of admixture analysis)
- Shockley 1970, "New Methodology to Reduce the Environment-Heredity Uncertainty About Dysgenics"
- Shockley 1971, "Hardy-Weinberg Law Generalized to Estimate Hybrid Variance for Negro Populations and Reduce Racial Aspects of the Environment-Heredity Uncertainty"
- "Negro IQ Deficit: Failure of a 'Malicious Coincidence' Model Warrants New Research Proposals", Shockley 1971
- "Dysgenics, Geneticity, Raceology: A Challenge to the Intellectual Responsibility of Educators", Shockley 1972a
- "A Debate Challenge: Geneticity Is 80% for White Identical Twins' I.Q.'s", Shockley 1972b
- Playboy 1980, William Shockley interview with Playboy
Books by Shockley
- Shockley, William – Electrons and holes in semiconductors, with applications to transistor electronics, Krieger (1956) ISBN 0-88275-382-7.
- Shockley, William and Gong, Walter A – Mechanics Charles E. Merrill, Inc. (1966).
- Shockley, William and Pearson, Roger – Shockley on Eugenics and Race: The Application of Science to the Solution of Human Problems, Scott-Townsend (1992) ISBN 1-878465-03-1.
Notes
- Editor, ÖGV. (2015). Wilhelm Exner Medal. Austrian Trade Association. ÖGV. Austria.
Other notes
- Park, Lubinski & Benbow 2010, "There were two young boys, Luis Alvarez and William Shockley, who were among the many who took Terman's tests but missed the cutoff score. Despite their exclusion from a study of young 'geniuses,' both went on to study physics, earn PhDs, and win the Nobel prize."
- Leslie 2000, "We also know that two children who were tested but didn't make the cut -- William Shockley and Luis Alvarez -- went on to win the Nobel Prize in Physics. According to Hastorf, none of the Terman kids ever won a Nobel or Pulitzer."
- Shurkin 2006, p. 13 (See also "The Truth About the 'Termites'" Kaufman, S. B. 2009)
- Simonton 1999, p. 4 "When Terman first used the IQ test to select a sample of child geniuses, he unknowingly excluded a special child whose IQ did not make the grade. Yet a few decades later that talent received the Nobel Prize in physics: William Shockley, the cocreator of the transistor. Ironically, not one of the more than 1,500 children who qualified according to his IQ criterion received so high an honor as adults."
- Eysenck 1998, pp. 127–128 "Terman, who originated those 'Genetic Studies of Genius', as he called them, selected ... children on the basis of their high IQs; the mean was 151 for both sexes. Seventy-seven who were tested with the newly translated and standardized Binet test had IQs of 170 or higher—well at or above the level of Cox's geniuses. What happened to these potential geniuses—did they revolutionize society? ... The answer in brief is that they did very well in terms of achievement, but none reached the Nobel Prize level, let alone that of genius. ... It seems clear that these data powerfully confirm the suspicion that intelligence is not a sufficient trait for truly creative achievement of the highest grade."
References
- Brittain, J.E. (1984). "Becker and Shive on the transistor". Proceedings of the IEEE. 72 (12): 1695. doi:10.1109/PROC.1984.13075. ISSN 0018-9219. Retrieved 2 January 2015.
an observation that William Shockley interpreted as confirmation of his concept of that junction transistor
- Eysenck, Hans (1998). Intelligence: A New Look. New Brunswick (NJ): Transaction Publishers. ISBN 978-0-7658-0707-6.
- Giangreco, D. M. (1997). "Casualty Projections for the U.S. Invasions of Japan, 1945-1946: Planning and Policy Implications". Journal of Military History. 61 (3): 521. doi:10.2307/2954035. ISSN 0899-3718.
- Goodheart, Adam (2 July 2006). "10 Days That Changed History". New York Times. Retrieved 2 January 2015.
- Leslie, Mitchell (July–August 2000). "The Vexing Legacy of Lewis Terman". Stanford Magazine. Retrieved 5 June 2013.
- Park, Gregory; Lubinski, David; Benbow, Camilla P. (2 November 2010). "Recognizing Spatial Intelligence". Scientific American. Retrieved 5 June 2013.
- Shurkin, Joel (2006). Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age. London: Macmillan. ISBN 978-1-4039-8815-7. Lay summary (2 June 2013).
- Simonton, Dean Keith (1999). Origins of genius: Darwinian perspectives on creativity. Oxford: Oxford University Press. ISBN 978-0-19-512879-6. Lay summary (14 August 2010).
- Riordan, Michael; Hoddeson, Lillian (1997). Crystal Fire: The Invention of the Transistor and the Birth of the Information Age. Sloan Technology Series. New York: Norton. ISBN 978-0-393-04124-8. Lay summary – Technology and Culture review by Arthur P. Molella (10 December 2014).
- Saxon, Wolfgang (14 August 1989). "William B. Shockley, 79, Creator of Transistor and Theory on Race". New York Times. Retrieved 2 January 2015.
He drew further scorn when he proposed financial rewards for the genetically disadvantaged if they volunteered for sterilization.
- Shockley, William (1952). "Contributors to Proceedings of the I.R.E.". Proceedings of the I.R.E.: 1611. http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04050875
- Sparks, Morgan; Hogan, Lester; Linville, John (1991). "[Obituary:] William Shockley". Physics Today. 44 (6): 130–132. Bibcode:1991PhT....44f.130S. doi:10.1063/1.2810155. ISSN 0031-9228.
- Tucker, William H. (2007) [first published 2002]. The funding of scientific racism: Wickliffe Draper and the Pioneer Fund. University of Illinois Press. ISBN 978-0-252-07463-9. Lay summary (10 December 2014).
Further reading
- Riordan, Michael; Hoddeson, Lillian (1997). Crystal Fire: The Invention of the Transistor and the Birth of the Information Age. Sloan Technology Series. New York: Norton. ISBN 978-0-393-04124-8. Lay summary – Technology and Culture review by Arthur P. Molella (10 December 2014).
- Shurkin, Joel (2006). Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age. Macmillan. ISBN 978-1-4039-8815-7. Lay summary (10 December 2014).
External links
 |
Wikimedia Commons has media related to William Shockley. |
 |
Wikiquote has quotations related to: William Shockley |
- National Academy of Sciences biography
- Nobel biography
- Nobel Lecture
- PBS biography
- Gordon Moore. Biography of William Shockley Time Magazine
- Interview with Shockley biographer Joel Shurkin
- History of the transistor
- William Shockley (IEEE Global History Network)
- Shockley and Bardeen-Brattain patent disputes
- William Shockley vs. Francis Cress-Welsing (Tony Brown Show, 1974)
- Works by or about William Shockley in libraries (WorldCat catalog)
Categories:
- 1910 births
- 1989 deaths
- 20th-century American businesspeople
- 20th-century physicists
- American atheists
- American eugenicists
- American inventors
- American Nobel laureates
- American physicists
- California Institute of Technology alumni
- California Republicans
- Columbia University people
- Deaths from cancer in California
- Deaths from prostate cancer
- Experimental physicists
- IEEE Medal of Honor recipients
- Massachusetts Institute of Technology alumni
- Members of the United States National Academy of Sciences
- Recipients of awards from the United States National Academy of Sciences
- Nobel laureates in Physics
- Oliver E. Buckley Condensed Matter Prize winners
- Quantum physicists
- People from Hanover Township, New Jersey
- Race and intelligence controversy
- Science and technology in the San Francisco Bay Area
- Scientists at Bell Labs
- Scientists from California
- Scientific racism
- Semiconductor physicists
- Silicon Valley people
- Sperm donors
- Stanford University School of Engineering faculty
- United States Army Science Board people
- Winners of the Comstock Prize in Physics
- National Inventors Hall of Fame inductees
Languages
'mixture of cooperation and competition' and 'Shockley, eager to make his own contribution, said he kept some of his own work secret until "my hand was forced" in early 1948 by an advance reported by John Shive, another Bell Laboratories researcher'
In 1955, the physicist William Shockley set up a semiconductor laboratory in Mountain View, partly to be near his mother in Palo Alto. ...
The co-inventor of the transistor and the founder of the valley's first chip company, William Shockley, moved to Palo Alto, Calif., because his mother lived there. ...
He drew further scorn when he proposed financial rewards for the genetically disadvantaged if they volunteered for sterilization.
No comments:
Post a Comment